next generation 3D nano device simulator

nextnano³ is a simulator for calculating, in a consistent manner, the realistic electronic structure of three-dimensional heterostructure quantum devices under bias and its current density close to equilibrium. The electronic structure is calculated fully quantum mechanically, whereas the current is determined by employing a semiclassical concept of local Fermi levels that are calculated self-consistently.

Simulating quantum dots, quantum wires, RTDs, MOSFETs, HEMTs, etc.

• includes group IV materials (Si, Ge, SiGe) and all III-V materials and its ternaries as well as lattice-matched quaternaries
• flexible structures and geometries
• fully quantum mechanically
• based on the 8-band k.p model within a high precision finite differences grid

• includes strain in layered pseudomorphic structures from lattice mismatch
• includes piezo and pyroelectric charges
• growth directions along [001], [011], [111], [211], ... in short along any crystallographic direction
• equilibrium and non-equilibrium
• calculation of current close to equilibrium (semi-classical)
• magnetic field
• optical absorption
• 1D, 2D and 3D

Europe

• Germany: TU Munich, Walter Schottky Institute (Garching), University of Regensburg, Infineon Technologies (Munich)
• Italy: University of Rome "Tor Vergata"

North America

• USA: Bell Labs (Lucent Technologies)

The code was developed by several people during the past 5 years at the Walter Schottky Institute of the Technical University of Munich.

The code can be obtained from the Walter Schottky Institute:
www.wsi.tum.de/nextnano3

Support is available through webplexity.